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Topics Covered
IntroductionBW MICRO F 500 PV AND F 600 PVParticle Size Distribution- CARBOREX F 500 PV AND F 600 PVCutting Edge MaterialsParticle Size DistributionTypical Surface Chemical Values
Introduction
Washington Mills manufactures silicon carbide crude, macrogrits, microgrits, powders and sub-micron materials. Silicon carbide is a man-made material manufactured through heating silica sand and carbon to high temperatures in the Acheson furnace technique. Silicon carbide is an extremely hard material (Mohs hardness 9.25), is chemically inert and does not melt. Silicon Carbide has a high thermal conductivity, a low coefficient of thermal expansion, is thermal shock and abrasion resistant and has strength at high temperatures. Silicon carbide’s varied properties make it an effective material in many different applications.
Washington Mills manufactures its silicon carbide grits and powders to suit many industries and applications including: wire sawing silicon wafers, ceramic body armor, ceramic wear parts, semiconductor materials, power switching, high temperature heating elements, refractories, sandpaper, grinding wheels, gem polishing, advanced ceramics, diesel particulate filters, thermal sprays, aerospace applications, lapping, iron and steel and many others. Our silicon carbide grains and powders can be made to your exact size, chemistry and shape specifications.
BW MICRO F 500 PV AND F 600 PV
The black silicon carbide micro grits F 500 PV and F 600 PV are micro grits specially made for the wiresawing of silicon wafers for the semiconductor and photovoltaic industry.
The grits are carefully classified with our unique process technology to meet the particle size distribution required for this manufacturing process.
In addition to chemical analyses and particle size these grits will be analysed systematically for their circularity and abrasive efficiency, which are very critical parameters for these applications.
Particle Size Distribution- CARBOREX F 500 PV AND F 600 PV
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Cutting Edge Materials
For wiresawing of silicon wafers, we produce tailored silicon carbide qualities which are efficient, pure and consistent.
Particle Size Distribution
Particle size distribution is given in the table below.
| PARTICLE SIZE DISTRIBUTION |
| Grit designation |
dS3 -value max. ìm |
Median grain size dS50 -value ìm |
dS94 -value min. ìm |
F 500 PV
F 600 PV |
20,0
15,0 |
12,8±1,0
9,3±1,0 |
9,0
5,0 |
Particle size distribution measured on Beckman Coulter Multisizer 3, according to FEPA 42-2:2006.
Typical Surface Chemical Values
Typical surface chemical values are provided in the table below.
| TYPICAL SURFACE CHEMICAL VALUES |
| Product |
% SiC |
% Free C |
% Si |
% SiO2 |
% Fe tot. |
| BW F 500 PV / F 600 PV |
99,2 |
0,15 |
0,15 |
0,25 |
0,05 |
Chemical Analyses (in weight) according to FEPA 45-1986, R 1993, resp. ISO 9286.
Source: Washington Mills
For more information on this source, please visit Washington Mills.