Oxford Instruments has launched the PlasmaPro
100 Etch and Deposition tool which is a highly configurable system.
The company offers process chambers as standalone modules either with
load locks or in cluster configurations on square or hexagonal transfer
chambers. The tool provides superior uniformity, low cost of ownership,
and quality and high rate films having excellent control of film
properties.
Key Features
The product features of the PlasmaPro
100 Etch & Deposition Tool are:
- Choice of single wafer/batch or cassette loading
- In-situ chamber cleaning
- Can be combined into a cluster system with full
cassette-to-cassette wafer handling and central robotic wafer handler
for manufacturing processes
- A range of electrodes provides substrate temperature control at
-150°C to +700°C temperature range
- Endpoint detection by optical emission spectroscopy and laser
interferometry can be integrated to improve etch control
- Choice of a 6- or 12-line gas pod offers flexibility in process
gases and processes, and can be remotely sited in the service area from
the main process system
- Capable of 200 mm wafer handling and enables small batch (6 x 50
mm) pre- and pilot manufacturing capability
- Single wafer loading through the load-locked wafer entry
Wafer Handling:
- Square or hexagonal robotic handlers with MESC compatibility
- Up to 200 mm single wafer processing
- Multi-wafer batch processing for 50 to 100 mm, comprising
cassette loading of batch carrier plates
- Mechanical and/or E-chuck clamping options with He wafer backside
cooling
- Broad temperature range substrate electrodes: -150°C to 400°C or
700°C
| PECVD
tool |
RIE
tool |
| kHz and frequency mixing are
optional |
Cooled substrate electrodes |
| 13.56 MHz driven parallel plate
reactor |
13.56 MHz driven parallel plate reactor |
| 400ºC electrically grounded lower
electrode |
High conductance vacuum layout |
| Shower head gas inlet is optimized
for PECVD |
Shower head gas inlet is optimized for RIE |
Applications of the PlasmaPro
100 Plasma Etch & Deposition tool are:
- Metal (Nb, W) etch
- Bosch deep Si etch, Cryo Si etch and SOI processes for
microfluidics, MEMS and photonics
- III-V etch processes for photonic crystals, laser facets, via
holes and other applications in a broad range of materials, such as
AlGaN, AlGaAs, GaAs, GaN, InSb, InP, and InGaAsP
- Research and development process for AlGaN and GaN etching for
power devices like HB LEDs
- High rate and high quality SiO2 deposition for photonics
applications
Process Control:
- Large wafer area and batch process end-pointing by optical
emission spectrometry (OES)
- OES identifies changes in depletion of reactive gas species or
etch by-products
- Features the PC4500TM process tool software
- Predictive chamber cleaning end-pointing
- Laser end-point detection (LEPD) is provided for blanket etching,
for deposition monitoring, or where mask patterns allow. This is
particular handy for etching small wafer pieces or mini structures
The PlasmaPro 100 Etch & Deposition tool has about
200 mm single wafer manufacturing capability, thus providing high
throughput and superior uniformity on a wide range of applications. The
tool is suitable for HBLED, semiconductor electronics, MEMS and failure
analysis.
The process modules of the PlasmaPro
100 tool are built on 200 mm platforms, with multi-wafer and with
single wafer batch capability. It has a unique library with more than
6,000 process recipes. The load-locked wafer entry enables rapid wafer
exchange and offers a broad range of process gases and an extensive
process temperature range.