Oxford Instruments has launched an advanced etch and deposition tool
called PlasmaPro System133 which delivers excellent
performance for both research and development and production. The
system has about 300 mm single wafer and large batch capability and
provides high throughput and exceptional uniformity on a wide range of
applications.
Key Features
The product features of the PlasmaPro
System133 tool are:
- Broad temperature range substrate electrodes: -120°C to 400°C
- Multi-wafer batch processing for 2", 3" and 4" comprising
cassette loading of batch carrier plates
- Up to 300 mm single wafer or cassette loadv
Research and development capabilities of the PlasmaPro System133
tool:
- Choice of a 4-, 8- or 12-line gas pod offers flexibility in
process gases and processes and can be remotely sited in the service
area from the main process system
- Square or hexagonal robotic handlers with MESC compatibility
- Mechanical clamping and/or E-chuck options with He wafer backside
cooling
- Cassette-to-cassette handling with complete wafer tracking and
separate wafer process control where needed
Production capabilities of the OpenPlasmaPro System133 tool:
- Choice of cassette or single wafer/batch loading through the
load-locked wafer entry
- Endpoint detection by optical emission spectroscopy and/or laser
interferometry can be attached to the PlasmaPro System133 tool to
improve etch control
- Can be combined into a cluster system with full
cassette-to-cassette wafer handling and central robotic wafer handler
for manufacturing procedures
Process performance datasheets on 300 mm and multi-wafer batch
applications:
- HBLEDs: batch production performance for AlGaN, GaN and similar
materials; SiC substrate and sapphire etch
- 300 mm SiO2, SiNx deposition
- Diamond-like carbon (DLC) deposition and etch
Flexible configurations allow:
- Diamond Like Carbon (DLC)v
- Reactive Ion Etch (RIE)
- Inductively Coupled Plasma Etch (ICP)
- Plasma Enhanced Chemical Vapour Deposition (PECVD)
- Inductively Coupled Plasma Chemical Vapour Deposition (ICP CVD)
(HD-PECVD)