The Cold FE-TEM with stable ultrahigh resolution and next-generation analytical capabilities. Combination of high reputation Hitachi cold field emission electron source and 300kV accelerating voltage realizes both ultrahigh resolution imaging and high sensitivity analysis. Spatially resolved EELS and high precision parallel nanobeam electron diffraction open a new avenue for efficient and high precision material analysis.
High brightness Cold Field Emission (Cold FE) electron source
- Cold field emission electron source benefits nanoscale analysis with its high brightness and high energy resolution. Its inherent high coherency greatly contributes to ultrahigh resolution imaging and electron holography.
300kV accelerating voltage
- 300kV accelerating voltage allows atomic resolution imaging for thick specimens. Metals and ceramics with high atomic numbers are less electron transparent and often need to be observed at 300kV accelerating voltage.
Unique analytical capabilities
- Newly introduced spatially resolved EELS and nanobeam electron diffraction provide sophisticated and unique analytical capabilities.
Holder linkage with FIB system(*)
- Hitachi FIB-compatible specimen holder requires no tweezer handling of TEM grid between FIB fabrication and TEM observation and ensures high sample throughput TEM analysis. Hitachi's unique specimen rotation holder enables real-time multidirectional structural analysis together with STEM unit.
- Windows-based TEM/STEM computer control, motor-driven movable aperture, and 5-axis motor stage make the high-end TEM more easily to access, 10 minutes high voltage ready and one minute specimen exchange result in high sample throughput for TEM analysis.