The Nanofab 800Agile offers excellent growth of nanowires and nanotubes with in situ catalyst activation and thorough process control.
Key Features
The features of the Nanofab 800Agile are:
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It is possible to use different sample sizes up to a maximum of 200mm wafers
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Metal organic (MOCVD) precursor delivery for compound semiconductor nanowires
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PECVD film capability
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Ordered growth and control of film stress
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High temperature uniformity, and flexible agility control
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Ability to process in high flow and pressure conditions
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Optional liquid source delivery system
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Vacuum load lock to offer separate sample preparation and process operation
Process Tool Features
The process tool features of the Nanofab 800Agile are:
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Growth of nanowires and nanotubes that can be controlled with flexible temperature up to 800 °C
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Agile cooling and heating for rapid turnaround
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PECVD - standard and high temperature deposition
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High temperature electrode
Process Benefits
The process benefits of the Nanofab 800Agile are:
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Controllable growth of nanowires and nanotubes
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Plasma pre-treatment of the catalyst for improved growth
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Annealing capabilities up to 800 °C
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Broad range of PECVD film deposition with superior uniformity, high deposition rates and control of film characteristics that include stress, refractive index, electrical characteristics and wet chemical etch rates
The nanostructured materials that are used include C, Si, Ge, ZnO, Ga2O3, GaN, GaAs, GaP, InP, InN. The PECVD films are SiO2, SiNx, a-Si, SiON, poly-Si, SiC