OpAL has launched an innovative thermal atomic layer deposition (ALD) tool with a clear and convenient upgrade route to plasma, offering both thermal and plasma ALD in one compact tool.
Key Features
The features of the ALD system are:
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Open loaded thermal ALD tool with plasma option
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Field upgrade offered for plasma option
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Small wafer pieces up to full 200mm wafers - equally suitable for industry
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and academic institutes.
R&D thermal and/or plasma chemistries are offered for:
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Oxides: HfO2, Al2O3, TiO2, SiO2, ZnO, Ta2O5
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Nitrides: TiN, Si3N4
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Metals: Ru, Pt
ALD System Benefits
The benefits of the OpAL ALD system are:
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Bubbling or vapor draw of up to four solid or liquid precursors
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A nitrogen purged glove box can be fitted to the system having sample entry load lock for a dry environment
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Liners can be easily detached and chamber cleaning time can be minimized
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In-situ analytical options include spectroscopic ellipsometry incorporated in ALD control software
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The system uses an OpAL multi-user level, recipe driven, PC2000TM control software that is simple to use and customized for rapid cycle ALD.
ALD Applications
The key applications of OpAL ALD are:
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Storage capacitor dielectrics
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High aspect ratio diffusion barriers for Cu interconnects
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Nano-electronics
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High-k gate oxides
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Passivation of crystal silicon solar cells
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Pinhole-free passivation layers for OLEDs and polymers
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Highly conformal coatings for MEMS and microfluidic applications
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Coating of nanoporous structures
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Fuel cells
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Bio MEMS