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Physical Vapour Deposition (PVD) System - PlasmaPro System400 from Oxford Instruments - Plasma Technology

The PlasmaPro System400 is used for single-wafer or batch PVD processing and offers the flexibility of pulsed dc, dc, rf and reactive magnetron sputtering. It finds applications in production or research & development. The PlasmaPro System400 can be configured either with 4 x 200 mm or 6 x 100 mm rf and/or dc magnetrons. The single process chamber is sectioned into 4 or 6 sub-chambers, isolating the sources from each other and eliminating the high costs of clustering several single process chambers. Multi-layer processes are automated by process recipes in the PC2000TM process tool software, with its flexible user-friendly and intuitive graphical interface options.

Salient Features

The salient features of the PlasmaPro System400, offering optimum process uniformity and stability, include:

  • The operation of the wafer table may be done in either rotating or static mode.
  • It is possible to attach uniformity masks in order to improve uniformity or to remove them for high-rate processes.
  • rf bias enables plasma pre-cleaning.
  • Loadlocked wafer entry reduces particle contamination.
  • Optional cryo-pump is provided for moisture-sensitive applications.
  • The system can sputter metals and oxides having film thicknesses from 20nm up to several mm.
  • Can be used for the complete range of sputtered metals - from Al to Zr.
  • Flexibility in processes and materials is possible by the wide temperature range of the wafer table, with both water-cooling and heating up to 300°C.
  • rf bias enables plasma-assisted deposition for lower temperatures, greater adhesion and greater flexibility in the choice of substrate materials
  • Multiple materials can be deposited in one chamber in a single process.

The PlasmaPro System400 offers a variety of wafer handling options, including:

  • Single-wafer loadlock.
  • Cassette loading.
  • Clustered cassette-to-cassette via robotic wafer transfer.
  • Flexible Volume Throughput.

The loading capacity is shown in the table below:

Wafer size (mm) Capacity
50 8
75 8
100 8
150 4
200 4

The typical uniformity is shown in the table below:

100 mm ± 3%
125 mm ± 4%
150 mm ± 5%
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