Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, today announced the launch of two new nitride template product lines.
Kyma's AlN on Si templates are crack-free and low-bow and consist of a thin (up to 200nm) layer of crystalline AlN deposited on a Si (111) substrate. Diameters of 2", 3", and 4" are currently available. The highly-oriented sub-grain structure and smoothness (<1nm RMS) of the crystalline AlN layer provides an excellent epi-ready nucleation surface for customers to deposit GaN-based device layers.
Kyma's GaN on Si templates are crack-free and low-bow and consist of a thin, smooth (<1nm RMS) layer of GaN deposited on top of a Kyma AlN on (111) Si template. The GaN on Si template products currently offered have a 500 nm GaN layer and 2", 3", and 4" diameters. The GaN surface is epi-ready for epitaxial growth of additional GaN and GaN-based device layers such as light emitting diodes (LEDs), field effect transistors (FETs), and Schottky diodes.
The combination of low cost silicon substrates and Kyma's low-cost high-performance deposition processes are excellent starting ingredients to make a cost-effective high-quality template.
Tamara Stephenson, Kyma's Technical Sales Engineer, stated, "Our customers have been asking us to develop GaN and AlN template products based on Si substrates. It is a great pleasure to begin accepting orders for these highly anticipated products."
Dr. Ed Preble, Kyma's COO and VP Business Development added, "The market pull for Kyma's template products is strong, especially for these GaN and AlN on Si templates. Important goals for us are to continuously improve and augment our growing portfolio of advanced crystalline III-N substrates according to the expanding needs of the market."
In the future, Kyma will offer larger diameter templates and also will be extending the GaN thickness further, in order to provide lower defect densities and higher thermal conductivity.