Kyma Technologies, Inc., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, today announced the signing of a Joint Development Agreement (JDA) with Sensor Electronic Technology, Inc. (SETI) to develop low defect-density AlGaN substrates and high performance optoelectronic and electronic devices based on these substrates.
Under this JDA, Kyma will develop novel low defect-density AlGaN substrates and SETI will employ those substrates in the development of next generation high efficiency Deep UV LEDs.
Each nitride semiconductor device layer stack has a preferred substrate lattice constant, which implies a preferred substrate composition. AlN and GaN substrates are preferred for device layer stacks which are AlN-rich and GaN-rich, respectively. For device layer stacks which have an intermediate preferred lattice constant, such as Deep UV LEDs and certain next generation high frequency and high power electronics, AlGaN substrates are preferred.
SETI is the world's only commercial manufacturer of Deep UV LEDs and LED lamps and currently has a product portfolio of LEDs, LED lamps and LED solutions from 240nm through 400nm. Recently, SETI announced high power single chip LEDs exceeding 30 mW in the UVC spectrum.
"The substrate developments made under this Agreement will help SETI continue to improve its performance of high power LEDs and lamps " said President and CEO of SETI, Remis Gaska, "This will help us grow new markets and maintain our position as leaders in Deep UV LED products."
"We are excited over the opportunity to work with SETI to develop a low defect-density AlGaN substrate product line, which should benefit a range of advanced nitride semiconductor device technologies," added Keith Evans, President and CEO of Kyma Technologies.
SETI and Kyma will both be presenting at the International Workshop on Nitride Semiconductors (IWN 2010) in Tampa, Florida on September 19th to 24th.