Veeco Instruments Inc. (Nasdaq: VECO) announced today that Samsung Advanced Institute of Technology (SAIT) in Korea has selected Veeco's TurboDisc(R) K465i(TM) Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for advanced GaN on Si research for power electronics.
According to William J. Miller, Ph.D., Executive Vice President of Veeco's Compound Semiconductor Business, "Being selected as a research partner for GaN on Si by SAIT is an important strategic R&D win for Veeco. We look forward to continuing to work with SAIT to commercialize this technology for high volume manufacturing of GaN-based power electronic devices."
TurboDisc K465i GaN MOCVD System
"The GaN power electronics market is expected to grow significantly in coming years, with potential applications in energy-efficient power conversion devices," according to Jim Jenson, Vice President of Marketing for Veeco's Compound Semiconductor Business. Veeco's MOCVD technology is well positioned to serve this emerging market.
The K465i incorporates Veeco's Uniform FlowFlange(R) technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput. The production-proven K465i provides ease-of-tuning for fast process optimization on wafer sizes up to 8 inches and fast tool recovery time after maintenance.