By Gary Thomas
Toshiba America Electronic Components (TAEC), an independent operating company owned by Toshiba America, has launched a new high gain, high power gallium nitride (GaN) hybrid IC (HIC), TGM9398-25.
The company will display the new X-Band GaN Hybrid IC at the 2012 IEEE MTT-S International Microwave Conference, which will be held in Montreal, Canada from June 19 to 21. The TGM9398-25 product is available in small hermetically-sealed packages.
The TGM9398-25 HIC operates in the frequency ranging from 9.3 to 9.8 GHz and has power added efficiency of 35%. In addition, the product has linear gain of 25dB (typ.) and output power of 25W (typ.) at 1dB. The company made commercial introduction of the TGI8596-50, a 50W discrete GaN internally-matched high electron mobility transistor (HEMT) for the band, in 2008 and the TGI0910-50 in 2010. The TGM9398-25GaN HIC is offered in a package with the existing discrete internally-matched HEMT to aid easy upgrades for traditional designs. It is ideal for transmitter and receiver modules (TRMs) that are employed in radar applications, such as passive electronically scanned array (PESA) and active electronically scanned array (AESA).
The higher gain with energy saving characteristics of the GaN hybrid IC will support their customers to design advanced telecommunication systems, noted Homayoun Ghani of TAEC's Discrete Business Unit.