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Posted in | Semiconductor | Electronics

Innovative Semiconductor Metrology Products from Bruker

Published on July 12, 2012 at 3:22 AM

By Nick Gilbert

Bruker, a provider of high-performance scientific instruments and solutions for molecular and materials research, has introduced three new semiconductor metrology products at the SEMICON West 2012 exhibition.

The products include the InSight-450 3DAFM from the company’s Nano Surfaces division and S8 FABLINE-T and D8 FABLINE X-ray systems from AXS division. The semiconductor metrology products are developed to address the industry challenges at potential technology nodes on the bigger 450 mm wafer size. Thus, they enable greater product ability and reliability for semi development and manufacturing facilities.

Automated atomic force microscopes (AFMs) from Bruker eliminate the requirement for model setup and offer TEM-like accuracy in less time without any damage to wafers. They have been proven as essential tools for important technology development and constant process control in production. Correspondingly, the company’s X-ray metrology offers a reliable, precise and non-contact process to characterize a wider range of semi parameters without any reference.

The InSight-450 3DAFM is an ideal instrument to impart early knowledge in 450 mm process development to production. The tool’s capabilities include etch depth metrology for process development and control; thin film and epitaxial deposition performance; roughness characterization and pit/bump/scratch defect metrology; incoming substrate qualification and bare wafer process validation. The metrology product is suitable for several CD, depth and roughness applications.

The S8 FABLINE-T TXRF has been developed by Bruker for non-destructive trace metal and light element contamination analysis to continue the entry into the semiconductor market. The D8 FABLINE system provides a wide range of thin film, in-line X-ray measurements for BEOL and FEOL process monitoring on wafers. The system is ideal for determining strain, composition and thickness in SiGe, SiC, SOI and III_V on Si and also for analyzing composition and thickness of metal films and stacks.

Source: http://www.bruker.com/

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