Mar 24 2014
Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, today introduced the first 2W integrated power amplifier operating with a 5V supply and delivering more than 40 dB of gain to cover all frequency bands between 1500 MHz and 2700 MHz. The component supports any cellular standard operating at this frequency including GSM, 3G, 4G and LTE.
Freescale’s versatile, high gain MMZ25333B is suitable for driver and pre-driver applications in macrocell base stations, and final-stage applications in small cells. The ultra-high performance and integration of the PA help customers reduce part counts, streamline supply chains and optimize costs. And because the device can be used across multiple platforms and frequency bands, it can be reused from project to project, simplifying supply chain inventory.
“With this product introduction, Freescale yet again achieves another industry first that offers compelling advantages for our customers,” said Ritu Favre, senior vice president and general manager of Freescale’s RF business. “No other device covers the significant portion of the wireless communications spectrum from 1500-2700 MHz and can match output power of 2W and gain of more than 40 dB. It is a pacesetting product from the worldwide RF power leader.”
The MMZ25333B is a multi-stage power amplifier based on InGaP GaAs HBT technology and is housed in an industry-standard 4 mm QFN package.
Pricing and availability
Production-ready samples of the MMZ25333B are available now and the device is planned for full production in April 2014. For more information, please contact a local Freescale sales office or visit www.freescale.com/RFlowpower.
Source: http://www.freescale.com/