InP combines electron mobility with a wide band gap, making it a useful semiconductor for the manufacture of optoelectronic devices. This is particularly the case with communication devices, and demand for this is rapidly expanding as data traffic increases.
InP allows components to be manufactured which can operate at high frequencies, therefore allowing high volumes of data traffic. It especially offers advantages for laser diode manufacture and can provide exceptional functionality at competitive prices. When InP lasers are optimized in terms of design and fabrication, they can provide not only high spectral purity but also high optical power, both over a wide temperature range.
The optimal achievable wavelength range for fiber-optic communication is 1,100 – 2,000 nm. It is important to ensure that processing strategies for the production of InP lasers are cost-effective, and that these are able to directly support the development of communications technology to support an ever increasing demand for data transfer capability.
This article explores the role of plasma processing technologies in InP laser diode manufacture. It focuses on the relative merits of inductively coupled plasma reactive ion etching (ICP-RIE) of the InP mesa. Furthermore, the article will explore relevant characteristics of various processes, and look at how they can be optimally applied in different combinations to manufacture high performance lasers.
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This information has been sourced, reviewed and adapted from materials provided by Oxford Instruments Plasma Technology.
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