Indium Phosphide (InP) Laser Diode Device Production - Maximising Performance with Plasma Deposition

InP combines a wide band gap and high electronic mobility, making it a good choice of semiconductor for the fabrication of optoelectronic devices. This is especially the case within the communications market, where InP’s particular properties mean it is increasingly suited to meeting the demand for increased data traffic.

Components manufactured with InP can operate at high frequencies, thus catering for higher volumes of data transfer. It also offers numerous advantages for the manufacture of laser diodes, delivering exceptional functionality at a very competitive price.

Optimized design and fabrication allow InP lasers to provide high spectral purity and optical power over a wide temperature range. This gives an achievable wavelength range of 1,100 – 2,000 nm that is optimal for fiber optic communication.

Because the demand for data transfer is constantly increasing, cost-effective processing strategies for the manufacture of InP lasers are not only essential in terms of maintaining efficiency, but it also directly supports the advancement of communications technology itself.

This article explores the role of plasma processing technologies in InP laser diode manufacture. It will look at the relative merits of inductively coupled plasma chemical vapor deposition (ICPCVD) and plasma enhanced chemical vapor deposition (PECVD). Furthermore, the article will examine the key characteristics of the different processes, showing how they can be optimally applied in combination to fabricate high performance lasers.

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This information has been sourced, reviewed and adapted from materials provided by Oxford Instruments Plasma Technology.

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