Indium Arsenide (InAs) Semiconductors

Topics Covered

Chemical Properties
Electrical Properties
Thermal, Mechanical and Optical Properties
Safety Information


Indium arsenide is a semiconductor material made of arsenic and indium. The semiconductor has a melting point of 942 °C and appears in the form of grey crystals with a cubic structure. It is very similar to gallium arsenide and is a material having a direct bandgap. Indium arsenide is popular for its narrow energy bandgap and high electron mobility.


The applications of indium arsenide are listed below:

  • Indium arsenide is used to construct infrared detectors for a wavelength range of 1–3.8 µm. The detectors are normally photovoltaic photodiodes.

  • Detectors that are cryogenically cooled have low noise but InAs detectors can be used in high-power applications at room temperature also.

  • Diode lasers are also made using indium arsenide.

  • Indium arsenide and gallium arsenide are similar and it is a direct bandgap material.

  • It is used as a terahertz radiation source.

  • It is possible to form quantum dots in a monolayer of indium arsenide on gallium arsenide or indium phosphide

  • It is also possible to form quantum dots in indium gallium arsenide in the form of indium arsenide dots arranged in the gallium arsenide matrix.

Chemical Properties

The chemical properties of indium arsenide are provided in the table below:

Chemical Properties
Chemical Formula InAs
Molecular Weight 189.74
CAS No. 1303-11-3
IUPAC Name Indium (III) Arsenide
Group NA
Band Gap 0.354 eV
Band Gap Type Direct
Crystal Structure Zinc Blende
Symmetry Group Td2-F43m
Lattice Constant 6.0583 Angstroms

Electrical Properties

The electrical properties of indium arsenide are provided in the table below:

Electrical Properties
Intrinsic Carrier Concentration 1 x 1015cm-3
Electron Mobility ≤ 4 x 104cm2 V-1 s-1
Hole Mobility ≤ 5x102 cm2 V-1 s-1
Electron Diffusion Coefficient ≤ 103 cm2 s-1
Hole Diffusion Coefficient ≤ 13 cm2 s-1

Thermal, Mechanical and Optical Properties

The thermal, mechanical and optical properties of indium arsenide are provided in the tables below:

Mechanical Properties
Melting Point 942 °C
Density 5.67 g cm-3
Thermal Properties
Thermal Conductivity 0.27 W cm-1 °C-1
Thermal Diffusivity 0.19 cm2 s-1
Thermal Expansion Coefficient 4.52x10-6 °C-1
Optical Properties
Infrared Refractive Index (@300 K) 3.51
Radiative Recombination Coefficient (@ 300 K) 1.1x10-10 cm3 s-1

Safety Information

Safety Information
GHS Hazard Statements NA
Hazard Codes T - Toxic
N – Dangerous to the environment
Risk Codes organisms R23 - Toxic by inhalation
R25: Toxic if swallowed
R50: Very toxic to aquatic



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