Gallium Arsenide Antimonide - GaAsSb (GaAs1-xSbx) Semiconductors

Topics Covered

Description
Chemical Properties
Thermal, Mechanical and Optical Properties

Description

Gallium arsenide antimonide is a semiconductor compound including the elements gallium, arsenic and antimony. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb), with the ratio of these components typically denoted by "x" in the chemical formula.

Most applications use a high proportion of GaAs - typical values for x are around 0.3 or lower. The properties of gallium arsenide antimonide rely heavily on the value of x. This article uses x=0.3 as the default value for the properties given.

Chemical Properties

The chemical properties of Gallium arsenide antimonide are provided in the table below:

Chemical Properties
Chemical Formula GaAs1-xSbx
Group III-V
Band Gap 0.96 eV
Band Gap Type Direct
Crystal Structure Zinc Blende
Symmetry Group Td2-F43m
Lattice Constant 5.8687 Å

Thermal, Mechanical and Optical Properties

The thermal, mechanical and optical properties of Gallium arsenide antimonide are provided in the tables below:

Mechanical Properties
Melting Point 1062 °C
Density 5.4 g cm-3
Bulk Modulus 6.7x1010 Pa
Thermal Properties
Thermal Conductivity 0.68 W cm-1 °C-1
Thermal Diffusivity 0.372 cm2 s-1
Thermal Expansion Coefficient 4.60x10-6 °C-1
Optical Properties
Infrared Refractive Index (300 K) 3.46

 

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