Indium Arsenide Antimonide Phosphide (InAsSbP) Semiconductors

Topics Covered

Chemical Properties
Recent Developments


Indium arsenide antimonide phosphide is a semiconductor material that can be grown gallium antimonide, indium arsenide and other materials.


Indium arsenide antimonide phosphide finds applications in the following:

  • It has been widely used as blocking layers for semiconductor laser structures
  • Photodetectors
  • Thermophotovoltaic cells
  • Mid-infrared light emitting diodes.

Chemical Properties

The chemical properties of indium arsenide antimonide phosphide are provided in the table below:

Chemical Properties
Chemical Formula InAsSbP
CAS No. 177408-89-8
Group Indium – 13
Arsenide – 15
Antimonide – 15
Phosphorus - 15

Recent Developments

Wu, Di (1999) studied and developed indium arsenide antimonide phosphide-based laser structures grown by low pressure metal-organic chemical vapor deposition. Growth conditions such as growth rate and growth temperature were also evaluated and optimized by using various characterization technologies.

The laser structures have been designed and improved through device modeling and the feed back of the laser performances. In addition, the recombination processes and carrier leakage have been investigated by studying the temperature dependence of the photoluminescence intensities.

Modeling was done to optimize the structural parameters such as critical thickness, the number of wells, well thickness and waveguide thickness. The results revealed that the indium arsenide antimonide phosphide is a promising candidate for use in deep mid-wave infrared lasers.


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