The PlasmaPro 100 Cobra inductively coupled plasma (ICP) etch system from Oxford Instruments is designed to handle ICP etching of dielectric, compound semiconductor, metals, and organic materials. ICP dry etching is supported by a wide range of processes. The ICP source creates a high density of reactive species at low pressure. The system’s process chambers are available as standalone units with load locks or in cluster configurations on square or hexagonal transfer chambers.
A separate RF generator independently controls the substrate DC bias thereby allowing control of ion energy based on process requirements. The Cobra modules (PlasmaPro 100 Cobra65, PlasmaPro 100 Cobra180, and PlasmaPro 100 Cobra300) provide reactive species to the substrate, with a consistent high conductance path via the chamber, thereby enabling high gas flow while maintaining low pressure levels.
The PlasmaPro 100 Cobra is compatible with 50 to 200mm wafers or carriers, thus ensuring the possibility of developing devices that can be used in production in the same chamber hardware. The electrodes provided can handle temperatures from -150ºC to +400ºC, and offer single system flexibility.
The main features of the PlasmaPro 100 Cobra inductively coupled plasma (ICP) etch system are as follows:
- 13.56MHz driven substrate electrode
- In-situ chamber cleaning
- Cooled and heated substrate electrode options
- 4- 8- or 12-line gas pod options provide versatility in various processes
- High conductance vacuum layout
- Single wafer load lock for wafer transfer
- Can be combined with a cluster tool
- Solid state RF generators and close coupled matching networks ensures fast, consistent plasma matching
- Wafer clamping with Helium backside cooling is available for optimum wafer temperature control
- High pumping capacity provides wide process pressure window