AIXTRON’s AIX G5+ Reactor for GaN-on-Si Technology Receives CS Manufacturing Award 2013

AIXTRON SE today announced that it has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for gallium nitride on silicon (GaN-on-Si).

Dr. Frank Schulte, AIXTRON (on the right), receives the Award from Richard Stevenson, CS magazine

The Award recognizes key areas of innovation surrounding the chip manufacturing process from research to completed device, focusing on the people, processes and products that drive the industry forward.

Editor Richard Stevenson from Compound Semiconductor (CS) magazine presented the award yesterday, March 4, 2013 to AIXTRON’s Vice President Europe Dr. Frank Schulte. "GaN-on-silicon technology promises to revolutionize power electronics and slash the cost of LEDs, spurring a lighting revolution,” he commented at the award ceremony in conjunction with the CS Europe exhibition in Frankfurt, Germany. “One manufacturing tool that I am tipping to play a major role in driving both these changes is the AIXTRON AIX G5+, a reactor that combines high throughput with impressive levels of uniformity."

Andreas Toennis, Chief Technology Officer at AIXTRON SE, comments: “Delivering results on the leading edge of GaN-on-Si technology, we are very pleased that our achievements are recognized by the compound semiconductor industry through this prestigious prize. The AIX G5+ reactor has been specifically designed to produce GaN based devices on silicon without compromising performance or yield compared to processes on sapphire substrates.”

“GaN-on-Si is a very promising technology for future power electronics applications and high brightness LED manufacturing,” Dr. Frank Schulte adds.

The AIX G5+ is designed to handle five 200 mm wafers per production run providing high throughput and high yield growth of GaN devices on large area substrates.

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