Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200 mm Silicon (GaN-on-Si) with an AIXTRON tool.
GaN-on-Si power devices have attracted much attention from both academics and industry recently because of their potential applications in power electronics. Due to the defective nature of heteroepitaxial GaN layers grown on silicon, GaN-on-Si power devices have suffered from high buffer leakage.
Most recently, Enkris Semiconductor has produced high voltage GaN HEMT materials on 200 mm silicon with excellent uniformity and low buffer leakage combined with excellent thickness uniformity of <0.5 % without edge exclusion. Under special conditions the uniformity value can be improved even further.
“It has been well accepted that GaN on large size silicon substrates is the most cost-effective way to achieve high-volume production of GaN power devices. However, a large wafer bow combined with a high buffer leakage has hindered the further development of the GaN-on-Si technology so far. Our process on 200 mm silicon substrates shows that high breakdown voltage (less than 1600 V) GaN power devices with low leakage currently can be achieved with relatively thin buffer layers of 4 μm. They simplify the growth process, minimize the wafer bow and reduce the epi-cost significantly. Based on our processes which were applied on an AIXTRON system, GaN-on-Si power devices may reach even higher voltages in the near future,” comments Dr. Cheng Kai, co-founder of Enkris.
Dr. Frank Wischmeyer, Vice President Power Electronics at AIXTRON, says: “Enkris‘
remarkable success in achieving excellent layer quality and material properties show the
capability of our technology for high-voltage GaN HEMT applications. Our MOCVD
technology is enabling the integration of wide-bandgap semiconductors on large diameter
silicon substrates. AIXTRON is committed to support the power electronics industry
advancing toward high volume 200 mm GaN-on-Si device manufacturing.”