The VOYAGER™ is built to handle all industrial and academic electron beam lithography applications where the key objectives are maximum resolution and high write throughput.
Besides the recently developed innovative eWRITE system architecture, Raith places a lot of importance to ensure price/performance ratio satisfaction throughout the lifetime of the system.
The hardware and software has been stably designed for automated exposure operations. The innovative high-performance pattern generator and the electron optics have been flawlessly aligned.
Samples of up to eight inches are exposed at high speed. The required system stability is guaranteed, even in challenging environments, by a thermally stabilized and environmentally friendly housing.
VOYAGER Product Details
- High-speed direct write
- Diffractive optical elements
- Anti-counterfeiting security elements
- Batch compound semiconductor devices manufacturing
- 6” full travel
- Large Z travel
Unique Writing Mode:
With it’s innovative architecture VOYAGER allows for a cost-effective "through-the-wall-loading” setup of the e-beam writer.
Ultra High Resolution Lithography System
- Reliable speed from first design to finished sample
- Advanced and future safe system architecture
- Smart design: small system footprint and enclosed environment
- Excellent cost of ownership for dedicated Electron Beam Lithography writing with a speed of over 1 cm²/hour
Raith´s new eWrite technology combines dedicated electron beam lithography optics with an innovative pattern generator design. This technology is suitable for all jobs in R&D as well as for batch production.
- Sub-7 nm lines in HSQ (Image Credits: Raith GmbH, Dortmund)
- 150 nm gate in PMMA (bi-layer) (Image Credits: Raith GmbH, Dortmund)
- Center of a 1x1 cm² Fresnel lenses in SU-8 written in 53 minutes (Image Credits: Raith GmbH, Dortmund)
- Photonic crystal waveguide in ZEP520a (Image Credits: Thomas Krauss, University of York)
- 1x1 cm² grating in ZEP520a in less than two hours (Image Credits: Raith GmbH, Dortmund)
- Automatic switch between high throughput and high resolution mode (160 µm at 40 nA and 10 nm at 0.4 nA)