VOYAGER: High Performance Electron Beam Lithography

The VOYAGER™ is built to handle all industrial and academic electron beam lithography applications where the key objectives are maximum resolution and high write throughput.

Besides the recently developed innovative eWRITE system architecture, Raith places a lot of importance to ensure price/performance ratio satisfaction throughout the lifetime of the system.

The hardware and software has been stably designed for automated exposure operations. The innovative high-performance pattern generator and the electron optics have been flawlessly aligned.

Samples of up to eight inches are exposed at high speed. The required system stability is guaranteed, even in challenging environments, by a thermally stabilized and environmentally friendly housing.

VOYAGER Product Details

Main Applications

  • High-speed direct write
  • Diffractive optical elements
  • Anti-counterfeiting security elements
  • Batch compound semiconductor devices manufacturing

Column Technology

  • 50 kV
  • eWrite
  • Electron

Stage

  • 6” full travel
  • Large Z travel

Unique Writing Mode

  • traxx
  • periodixx

With it’s innovative architecture VOYAGER allows for a cost-effective "through-the-wall-loading” setup of the e-beam writer.

With it’s innovative architecture VOYAGER allows for a cost-effective "through-the-wall-loading” setup of the e-beam writer. Image credit: Raith

Ultra High Resolution Lithography System

  • Reliable speed from first design to finished sample
  • Advanced and future safe system architecture
  • Smart design: small system footprint and enclosed environment
  • Excellent cost of ownership for dedicated Electron Beam Lithography writing with a speed of over 1 cm²/hour

eWrite Technology

Raith´s new eWrite technology combines dedicated electron beam lithography optics with an innovative pattern generator design. This technology is suitable for all jobs in R&D as well as for batch production.

VOYAGER Applications

Sub-7 nm lines in HSQ (Image Credits: Raith GmbH, Dortmund)

Sub-7 nm lines in HSQ

150 nm gate in PMMA (bi-layer) (Image Credits: Raith GmbH, Dortmund)

150 nm gate in PMMA

Center of a 1x1 cm² Fresnel lenses in SU-8 written in 53 minutes (Image Credits: Raith GmbH, Dortmund)

Center of a 1x1 cm² Fresnel lenses

Photonic crystal waveguide in ZEP520a (Image Credits: Thomas Krauss, University of York)

Photonic crystal waveguide in ZEP520a

1x1 cm² grating in ZEP520a in less than two hours (Image Credits: Raith GmbH, Dortmund)

1x1 cm² grating in ZEP520a

Automatic switch between high throughput and high resolution mode (160 µm at 40 nA and 10 nm at 0.4 nA)

high throughput and high resolution mode

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