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The webinar will be conducted in English with real-time translation and captioning in English, Traditional Chinese, Japanese, and Korean, at an APAC-friendly time.
Wide bandgap (WBG) semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are changing the future of power electronics by enabling increased efficiency, reliability, and operation under harsh conditions.
With growing demand for electric vehicles, renewable energy, data centers, and industrial infrastructure, interface engineering and advanced plasma processing have emerged as essential commercial enablers.
In this webinar, industry and academic experts will present findings from recent collaborative research, describing how atomic-scale plasma techniques such as atomic layer deposition (ALD), atomic layer etching (ALE), and advanced surface pretreatments are addressing important challenges in SiC and GaN device production.
Attendees will hear practical insight on enhancing interface quality, increasing device performance and reliability, and scaling sophisticated techniques for high-volume manufacturing.
This Webinar Will Explore:
- How SiC and GaN are enabling high-efficiency power electronics in transportation, energy, and industrial applications
- How to face key interface, reliability, and yield problems in WBG device manufacturing
- The high-volume ALD and ALE solutions for GaN power and RF manufacturing
- Scalable plasma methods in commercially viable SiC power device production
- Strategies to enhance device performance and longevity via surface engineering
- Advanced characterization techniques, like EBSD and AFM, to optimize processes
Resources:
Presenters:
- Dr. Aileen O’Mahony, Product Manager, GaN power electronics and RF product solutions, Oxford Instruments Plasma Technologies
- Dr. Arne Benjamin Renz, Assistant Professor, School of Engineering, University of Warwick