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Kwansei Gakuin University in Hyogo, Japan, Uses Raman Microscopy to Study Crystallographic Defects in Silicon Carbide Wafers

Kwansei Gakuin University in Hyogo, Japan, Uses Raman Microscopy to Study Crystallographic Defects in Silicon Carbide Wafers

Crystallographic defects in 4H-SiC epitaxial wafers, such as dislocations and stacking faults, limit the commercialisation of SiC devices and must therefore be eliminated or reduced to levels lower than some critical density. [More]
Solid-State Memory Technology Allows High-Density Data Storage with Minimum Incidence of Computer Errors

Solid-State Memory Technology Allows High-Density Data Storage with Minimum Incidence of Computer Errors

A team of researchers at Rice University has developed an advanced solid-state memory technology that enables high-density data storage without causing any major computer errors. The memory device resolves crosstalk issues, which promote read errors in other devices. These memories are built on tantalum oxide - a standard insulator used in electronics. [More]
Breakthrough Technique to Fabricate Dual-Phase Molybdenum Ditelluride Transistor

Breakthrough Technique to Fabricate Dual-Phase Molybdenum Ditelluride Transistor

A multi-disciplinary research team had developed a fabrication technique for creating pure molybdenum ditelluride (MoTe2) last year. The team not only succeeded in developing pure MoTe2, it also was able to obtain two varieties – semiconducting and metallic. [More]
Large-Area Integration of Photonic Crystal and Quantum Dot Technology Helps Create Efficient Light

Large-Area Integration of Photonic Crystal and Quantum Dot Technology Helps Create Efficient Light

Researchers from the University of Illinois at Urbana-Champaign have been involved in creating a new technique that can extract highly efficient and polarized light from quantum dots (QDs) over a large-scale area. [More]
NPL Licenses Portable Environmental Test Chamber to FOM Technologies

NPL Licenses Portable Environmental Test Chamber to FOM Technologies

The Electrochemistry Group of the National Physical Laboratory (NPL) has built a portable environmental test chamber that can characterize optical and electronic devices under accurately-controlled environmental conditions. [More]
Black Phosphorus May Hold Promise as Replacement for Silicon Computer Chips

Black Phosphorus May Hold Promise as Replacement for Silicon Computer Chips

Researchers at the Institute for Basic Science (IBS) Center for Integrated Nanostructure Physics at Sungkyunkwan University (SKKU) in South Korea have developed a new semiconductor material from black phosphorus (BP), which holds promise as a replacement for silicon in future computer chips. [More]
Ellsworth Adhesives Europe Announces Availability of Robnor Resins TCP091 Silicone-Free Paste

Ellsworth Adhesives Europe Announces Availability of Robnor Resins TCP091 Silicone-Free Paste

Ellsworth Adhesives Europe is pleased to confirm availability of TCP091 - Robnor Resins newly launched silicone-free paste. This new product has been specially formulated to provide efficient and reliable heat transfer across the interface between electronic components. [More]
SMTA 2015: Indium to Showcase Indium8.9HF Halogen-Free, No-Clean Solder Paste

SMTA 2015: Indium to Showcase Indium8.9HF Halogen-Free, No-Clean Solder Paste

Indium Corporation will feature Indium8.9HF, a halogen-free, no-clean solder paste with excellent performance stability during printing, at the SMTA International Conference Sept. 27-Oct. 1 in Rosemont, Ill. [More]
Ultrafast Plasmonic Device Could Form the Basis for Optical Computers

Ultrafast Plasmonic Device Could Form the Basis for Optical Computers

A team of researchers at Duke University has developed an ultrafast plasmonic device, which can turn on and off 90 billion times per second. [More]
Complex, Scalable Arrays of Semiconductor Heterojunctions Hold Potential for Future Electronics

Complex, Scalable Arrays of Semiconductor Heterojunctions Hold Potential for Future Electronics

A team of researchers at the Oak Ridge National Laboratory, Department of Energy, has integrated a new synthesis process with standard electron-beam lithography methods to create complex and scalable arrays of semiconductor heterojunctions in random patterns within a nanometer-thick semiconductor crystal. This unique process depends on converting patterned areas of a single-layer crystal into another layer of crystal. The study has been published in Nature Communications. [More]