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PCIM Europe 2015: H.C. Starck to Highlight Refractory Material Products for Power Semiconductor and Thermal Management

PCIM Europe 2015: H.C. Starck to Highlight Refractory Material Products for Power Semiconductor and Thermal Management

H.C. Starck leads the technology metals industry with its engineered products fabricated from refractory materials for the power semiconductor and thermal management industries.H.C. Starck’s custom-engineered thermal management materials support the electronicsindustry’s migration to increased miniaturization of electronic components that require rapid cooling to be effective. [More]
IBM Develops New Silicon Photonics Technology for Cloud Computing and Big Data Applications

IBM Develops New Silicon Photonics Technology for Cloud Computing and Big Data Applications

IBM engineers have developed a CMOS integrated nano-photonics technology that would help in producing 100Gb/s optical transceivers. This latest development will enable datacenters to provide higher data rates and bandwidth for Big Data and cloud computing applications. [More]
Defects in Thin 2D Semiconductor Material Produce Quantum Dots

Defects in Thin 2D Semiconductor Material Produce Quantum Dots

University of Rochester researchers have generated light-emitting quantum dots using defects in an atomically thin semiconductor. The quantum dots initiate the production of single photons and are capable of combining quantum photonics and solid-state electronics, which is collectively called as integrated photonics. [More]
Researchers Improve Solar Cell Performance by Identifying Defects in Perovskites

Researchers Improve Solar Cell Performance by Identifying Defects in Perovskites

Researchers from the University of Washington and University of Oxford have identified inefficient regions in perovskite materialsResearchers from the University of Washington and University of Oxford have identified inefficient regions in perovskites and have shown that those defects can be engineered to further improve solar devices. [More]
Boron Nitride Encapsulation Improves Performance of 2D Semiconductor

Boron Nitride Encapsulation Improves Performance of 2D Semiconductor

Researchers at the Japanese National Institute of Materials Science, Danish Technical University, Yonsei University in Korea, University of Minnesota, Cornell, Harvard and Columbia Engineering have improved the performance of molybdenum disulfide (MoS2), a 2D material by encapsulating it in an insulating material, boron nitride (BN). [More]
Researchers Develop New Three-Atomic-Layer-Thick Semiconducting Material with Exotic Properties

Researchers Develop New Three-Atomic-Layer-Thick Semiconducting Material with Exotic Properties

Researchers have successfully created a new three-atomic-layer-thick semiconducting material. The novel material has electronic properties better than conventional semiconductors. The material’s two nano-engineered configurations have exhibited improved light response. [More]
HiPoSwitch Project Develops High-Efficiency, Lightning-Fast Gallium Nitride Power Switches

HiPoSwitch Project Develops High-Efficiency, Lightning-Fast Gallium Nitride Power Switches

The European HiPoSwitch project has developed novel nitride (GaN) transistors for high efficiency, high speed gallium nitride power switches. [More]
New Ultrathin Flexible Material Capable of Changing Colour on Demand

New Ultrathin Flexible Material Capable of Changing Colour on Demand

An ultrathin flexible material developed by the researchers at the University of California at Berkeley behaves as a chameleon-like skin by changing colour on demand during the application of force. [More]
Episil Semiconductor Wafer Commences Operations with AIXTRON Reactor for SiC Epitaxy

Episil Semiconductor Wafer Commences Operations with AIXTRON Reactor for SiC Epitaxy

AIXTRON SE, a worldwide leading provider of deposition equipment to the semiconductor industry, today announced that Taiwanese group Episil Semiconductor Wafer, Inc. has successfully put into operation an AIX G5 WW (Warm-Wall) reactor for silicon carbide (SiC) epitaxy. [More]
Advanced Semiconductor Engineering Becomes a Member of Electronics Industry Citizenship Coalition

Advanced Semiconductor Engineering Becomes a Member of Electronics Industry Citizenship Coalition

Advanced Semiconductor Engineering, Inc. announced today that it has joined the Electronics Industry Citizenship Coalition (EICC), the world’s largest industry coalition committed to creating shared value for the businesses, people, and communities who collectively contribute to the manufacture of electronic devices around the world. ASE’s membership further represents the Company’s resolve to align and work with suppliers and partners that share similar values regarding sustainability. [More]