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Tescan Announce Webinar on the Failure Analysis of Microelectronic Devices

In this webinar we discuss our recent achievements regarding failure analysis (FA) of microelectronic devices using our unique approaches. The presentation is divided into two parts. The first part will include FA results on integrated circuits (IC) based on state-of-the-art 14 nm node technology. [More]
Suss Microtec Relies on Eco-friendly LED-technology for Mask Aligner

Suss Microtec Relies on Eco-friendly LED-technology for Mask Aligner

SUSS MicroTec, a leading supplier of equipment and process solutions for the semiconductor and related markets, today announced the launch of a new UV-LED lamp house for use in its first exposure tools, which have a leading position in the market for more than fifty years.
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Mass Spectrometer System for UHV Thermal Desorption Studies

Mass Spectrometer System for UHV Thermal Desorption Studies

The Hiden TPD Workstation provides a versatile platform for precisely controlled thermal desorption studies(TDS) in the UHV pressure regime through a temperature range from 50 ºC to 1000 ºC. [More]
New Semiconducting Polymer for Futuristic Flexible Electronics

New Semiconducting Polymer for Futuristic Flexible Electronics

Polymer semiconductors have the potential to be used as a key part in plastic electronics of the future. These semiconductors can be processed economically on large-area and mechanically flexible substrates. [More]

Graphenea Increases Capacity with AIXTRON BM Pro

AIXTRON SE, a worldwide leading provider of deposition equipment to the semiconductor industry, today announced a new order for a BM Pro system from Spanish company Graphenea, one of the world’s leading suppliers of graphene and related materials. [More]
Aix G5+ C Qualified for Manufacturing of High-voltage GaN-on-Si Materials in Joint Project With imec

Aix G5+ C Qualified for Manufacturing of High-voltage GaN-on-Si Materials in Joint Project With imec

AIXTRON’s production technology integrates imec’s proprietary materials technology to increase performance of GaN-on-Si-based power devices. [More]
UCSB Researchers Identify Specific Defects that Hinder LED Performance

UCSB Researchers Identify Specific Defects that Hinder LED Performance

UCSB researchers have used modern theoretical methods to detect particular defects that hinder the performance of a light-emitting diode (LED). The characterization of such defects present in the LED’s atomic structure could result in the development of longer lasting and more efficient LED lighting. [More]
New-Structure Magnetic Memory Device Stores Information Without Power Supply

New-Structure Magnetic Memory Device Stores Information Without Power Supply

Researchers at Tohoku University have used a new scheme of spin-orbit-torque-induced (SOT-induced) magnetization switching to develop a unique magnetic memory device that can store data without power supply. The study was headed by Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University. [More]
Fairchild Launches FDMS86181 100V Shielded Gate PowerTrench MOSFET

Fairchild Launches FDMS86181 100V Shielded Gate PowerTrench MOSFET

Fairchild, a leading global supplier of high-performance semiconductor solutions, today launched the flagship device of the company’s newest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench® MOSFET. [More]
Breakthrough Results Pave Way for High-Speed, Low-Energy, and Highly Compact Semiconductors

Breakthrough Results Pave Way for High-Speed, Low-Energy, and Highly Compact Semiconductors

Heterostructures (referred to as Van der Waals {VdW}) are attracting a great deal of attention due to their diverse physical and chemical properties. A VdW heterostructure is assembled by stacking two or more different 2D semiconducting crystals on top of each other. [More]