Mar 8 2006
INTRINSIC Semiconductor has commenced commercial shipments of silicon carbide (SiC) wafers completely free of micropipes, as well as 100mm (4 inch) diameter SiC wafers. Both actions will benefit current customer applications and broaden the acceptance of silicon carbide as the advanced semiconductor material of choice for next-generation RF and power devices.
Silicon carbide has inherently superior characteristics to silicon and other semiconductor materials in high-power, high-frequency and high-temperature applications. However, so-called micropipe defects—voids that permeate SiC material as it is grown—have hampered yield improvement and price reductions. INTRINSIC’s ZMPTM material, now in sustained production, represents a major industry milestone to customers seeking higher yields and lower overall manufacturing cost.
The availability of 100mm material is another critical element that drives silicon carbide toward broader appeal and increased industry demand. Not only can SiC device manufacturers achieve a potential doubling in the number of devices per wafer compared with 75mm, but equipment capable of handling 100mm wafers is far more plentiful. Expanding its capacity in 100mm material will keep INTRINSIC on the forefront of customers’ material qualifications, setting the stage for volume production shipments in the second half of this year.
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