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Primary Methodology
1. Cleave cover slip glass to identical size as GaAs device area.
2. Epoxy glass cover slip to top surface (device side) of GaAs apparatus.
*Reduce epoxy interface with the assistance of sample clips
*Utilize the minimum possible quantity of epoxy
3. Sliver epoxy GaAs apparatus with cover slip onto polishing stub, allowing 2-4 mm to overhang.
*Utilize the minimum possible quantity of epoxy
4. Commence polishing using 15 μm diamond lapping film. Utilize the above diagram as a polishing stop guide for each abrasive size. Polishing platen speed needs to be 50-60 RPM, and polishing orientation should be coextensive with sample interface.
5. Undertake final polishing using CS1 colloidal silica on MultiTexTM cloth for 10-15 minutes. Polishing platen speed needs to be 50-60 RPM and polishing orientation should be perpendicular to sample interface, commencing from the base of GaAs apparatus toward glass cover slip.
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This information has been sourced, reviewed and adapted from materials provided by Ted Pella, Inc.
For more information on this source, please visit Ted Pella, Inc.