During this webinar Dr. Griffiths will describe how nanocathodoluminescence (nanoCL) can reveal the optical properties of individual InGaN quantum wells (QW) in high efficiency light emitting diodes.
In particular, he will discuss how the presence of a strong internal electric field across the quantum wells are a persistent LED development challenge because it separates the electron and hole wavefunctions leading to a reduction in the radiative recombination rate. Yet, simulations have shown that the device efficiency may theoretically be improved by inclusion of silicon dopants which serve to screen the internal electric field, and to achieve the highest efficiencies requires careful design and optimization. Here he will show how the combination of simulations and experimental nanoCL can be a powerful technique in the development of optoelectronic devices.
James Griffiths, Ph.D.
Cambridge Centre for Gallium Nitride
Jun 14 2016 8:00 AM - 9:00 AM (PDT)
To attend this web seminar, you must first register for it by clicking on the enrollment link below. Once you have registered, you will receive an email message confirming your enrollment status and information that you need to join the event.
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