With the use of high-density distant plasmas, which generate better film quality with less substrate damage, this ICPCVD process module is intended to make high-quality films at low growth temperatures.
Highlights
- Excellent uniformity, high throughput, and high precision processes
- High-quality films
- Wide temperature range electrode
- Compatible with all wafer sizes up to 200 mm
- Rapid change between wafer sizes
- Low cost of ownership and ease of serviceability
- Compact footprint, flexible layout
- Resistive heated electrodes with capability up to 400 °C or 1200 °C
- In-situ chamber cleaning and end-pointing
- Flexible vapor delivery module enabling deposition of films using liquid precursors, e.g., TiO2 using TTIP, SiO2 using TEOS
Applications
- At lower temperatures, excellent-quality, low-damage films are attainable
- SiO2, Si3N4, SiON, Si, and SiC are common materials that are deposited at substrate temperatures as low as 5 ºC
- ICP source sizes of 65 mm, 180 mm, 300 mm deliver process uniformity up to 200 mm wafers
- Electrodes available for temperatures ranging from 5 ºC–400 ºC
- Patented ICPCVD gas distribution technology
- In situ chamber cleaning with endpointing