As microelectronics features and devices become smaller and more complex, it
is critical that engineers and technologists completely understand how components
can be damaged during the increasingly complicated fabrication processes required
to produce them.
A comprehensive survey of defects that occur in silicon-based metal-oxide
semiconductor field-effect transistor (MOSFET) technologies, this book also
discusses flaws in linear bipolar technologies, silicon carbide-based devices,
and gallium arsenide materials and devices. These defects can profoundly affect
the yield, performance, long-term reliability, and radiation response of microelectronic
devices and integrated circuits (ICs). Organizing the material to build understanding
of the problems and provide a quick reference for scientists, engineers and
technologists, this text reviews yield- and performance-limiting defects and
impurities in the device silicon layer, in the gate insulator, and/or at the
critical Si/SiO2 interface. It then examines defects that impact production
yield and long-term reliability, including:
- Vacancies, interstitials, and impurities (especially hydrogen)
- Negative bias temperature instabilities
- Defects in ultrathin oxides (SiO2 and silicon oxynitride)
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