Since its inception in 1951, Rigaku has been at the forefront of analytical and industrial instrumentation technology.
With Rigaku's vast understanding of X-ray and its complementary...
Article - 11 Dec 2007
In this study, in order to decrease film resistivity, co-doping of fluorine (F) to ZnO:Al film was attempted using rf magnetron sputtering apparatus with the mesh grid electrode. The contamination of...
Article - 21 Sep 2005
Electro conductive nanosized ZnO powder were synthesized from zinc sulfate salt and aluminum sulfate salts. The crystallization process, morphologies, and thermal decomposition were studied as a...
News - 20 Dec 2016
One of the principal elements of new generation electronic and optoelectronic devices—such as displays, photovoltaic cells, light emitting diodes, smart phones, and so on—are transparent...
Article - 25 Oct 2005
A new type of triode field-emission display constructed by the ceramic cold emitter was designed and tested. The display had three electrodes, a ceramic cold emitter, extraction gate and accelerating...
Article - 15 May 2018
Utilizing the technique called focused ion beam – scanning electron microscopy (FIB-SEM), a study investigated the high capability thin-film solar cells which are made of Cu(In,Ga)Se2.
Rigaku's unique ZSX Primus 400 sequential wavelength dispersive X-ray fluorescence (WDXRF) spectrometer was specifically designed to handle very large and/or heavy samples that measure up to 400 mm in...
Article - 19 Dec 2007
Beta gallium oxide ceramics were coupled and reacted with alpha aluminum oxide ceramics at 1700oC for 24 hours. The compound in the layer is considered to be an attractive material for ultraviolet and...
Article - 23 Sep 2005
Y2O3:Eu fluorescent whiskers were grown on (100) and (111) yttrium stabilized zirconia substrates using the chemical vapor deposition technique operated under atmospheric pressure. The...
Article - 9 Nov 2010
Ni - 5 mol%Al alloys with 0.5 mol%Cr addition were prepared by an arc-melting process. Oxidation process was conducted at temperature ranging from 1000 to 1200°C with Co/CoO buffer to avoid oxidation...