XRD of Layer Thickness Gallium Nitride and Other Compounds

Currently, in the electronics business, gallium nitride, GaN, and related compounds are fast becoming major players. This book aims to provide an overview of the X-ray diffraction analysis of key structural parameters in epitaxial GaN layers. It introduces fundamental crystallographic concepts and how these relate to the specific requirements of the technological structures created for optoelectronic and electronic devices.

It is aimed at those wishing to gain a deeper understanding of the principles behind XRD applications in the continually advancing compound semiconductor devices field. It also provides a background explanation of the concepts employed in proprietary analysis software such as X’Pert Epitaxy for those who are engaged in the measurement of epitaxial layers and for those who would like to understand the analysis process to enable them to design their calculations. This book focuses on GaN technology, but the principles are mostly transferable to solutions for other compound semiconductor systems.

High-resolution rocking curves and reciprocal space maps are primarily used in the discussion of solution in this book. While other methods are available to investigate advanced materials, these are the most common applications in GaN device technology. Research environments often use reflectometry, in-plane scattering, SAXS and GISAXS as X-ray diffraction methods.

Rapid measurement and automation are continually improving through the emergence of new methods. A separate publication will detail these experimental methods. Malvern Panalytical X’Pert MRD and X’Pert MRD XL equipment can be used to carry out all of the measurements referred to in this book.

Precise and quantitative measurements are described using epitaxial device structures. The relative quality of defective epitaxial layers can be measured through several alternative methods. Such approaches include peak shape and width measurements (and via this route an exploration of mosaic block sizes), crystallographic tilts and rotations and estimations of defect densities and textural spread. Also introduced are the principles involved in qualitative analyses.

  • Chapter 1 provides a brief introduction to GaN device technology concepts relevant to XRD metrology.
  • Chapter 2 discusses expressions of crystal structure, crystal dimensions and crystal orientation, as well as procedures for calculating strain, composition and layer thickness in epitaxial thin films.
  • Chapter 3 provides an introduction for obtaining diffraction peak positions and the application of Bragg’s law to obtain crystallographic d-spacings.
  • Chapter 4 provides an introduction to an alternative route to obtaining epitaxial layer thicknesses, compositions and strains in terms of the methods of diffraction pattern simulation and fitting.
  • Chapter 5 discusses how to use measurements of peak widths as a guide to mosaic block sizes and tilts and hence dislocation densities in GaN buffer layers.

Read the Full Article Here

This information has been sourced, reviewed and adapted from materials provided by Malvern Panalytical.

For more information on this source, please visit Malvern Panalytical.

Citations

Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    Malvern Panalytical. (2023, May 30). XRD of Layer Thickness Gallium Nitride and Other Compounds. AZoM. Retrieved on February 24, 2024 from https://www.azom.com/article.aspx?ArticleID=18605.

  • MLA

    Malvern Panalytical. "XRD of Layer Thickness Gallium Nitride and Other Compounds". AZoM. 24 February 2024. <https://www.azom.com/article.aspx?ArticleID=18605>.

  • Chicago

    Malvern Panalytical. "XRD of Layer Thickness Gallium Nitride and Other Compounds". AZoM. https://www.azom.com/article.aspx?ArticleID=18605. (accessed February 24, 2024).

  • Harvard

    Malvern Panalytical. 2023. XRD of Layer Thickness Gallium Nitride and Other Compounds. AZoM, viewed 24 February 2024, https://www.azom.com/article.aspx?ArticleID=18605.

Ask A Question

Do you have a question you'd like to ask regarding this article?

Leave your feedback
Your comment type
Submit
Azthena logo

AZoM.com powered by Azthena AI

Your AI Assistant finding answers from trusted AZoM content

Azthena logo with the word Azthena

Your AI Powered Scientific Assistant

Hi, I'm Azthena, you can trust me to find commercial scientific answers from AZoNetwork.com.

A few things you need to know before we start. Please read and accept to continue.

  • Use of “Azthena” is subject to the terms and conditions of use as set out by OpenAI.
  • Content provided on any AZoNetwork sites are subject to the site Terms & Conditions and Privacy Policy.
  • Large Language Models can make mistakes. Consider checking important information.

Great. Ask your question.

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.