Editorial Feature

Cadmium Zinc Telluride (CdZnTe) Semiconductors

Cadmium zinc telluride is an alloy of zinc telluride and cadmium telluride. It has a high electro-optic coefficient and transparency in the mid-infrared region. It is a direct bandgap semiconductor used in a number of applications. It posseses lowest thermal conductivity among all semiconductors, which make it difficult to obtain planar solid-liquid interface required for single crystal growth.


Cadmium zinc telluride finds applications in the following:

  • Radiation detectors
  • Photorefractive gratings
  • Electro-optic modulators
  • Infrared lasers
  • Solar cells
  • Terahertz generation and detection.

Chemical Properties

The chemical properties of cadmium zinc telluride are provided in the table below:

Chemical Properties
Chemical Formula CdZnTe
Molecular Weight 235.31
CAS No. 303114-50-3
Group Cadmium – 12
Zinc – 12
Tellurium – 16

Electrical Properties

The electrical properties of cadmium zinc telluride are provided in the table below:

Electrical Properties
Band Gap 14.4 to 2.2 eV
Specific Resistivity >1x102 Ω cm-1

Mechanical and Optical Properties

The mechanical and optical properties of cadmium zinc telluride are provided in the tables below:

Mechanical Properties
Melting Point 1100-1150°C
Optical Properties
Refractive Index 3.09
Chromatic Dispersion -2.266 µm-1
Extinction Coefficient 7.360 e-2

Safety Information

Safety Information
GHS Hazard Statements H332 - Harmful if inhaled
H334 - May cause allergy or asthma symptoms or breathing difficulties if inhaled
H335 - May cause respiratory irritation
H372 - Causes damage to organs through prolonged or repeated exposure.
Safety Precautions P233 - Keep container tightly closed
P264 - Wash hands thoroughly after handling
P280 - Wear protective gloves/protective clothing/eye protection/face protection
P341 - If breathing is difficult, remove victim to fresh air and keep at rest in a position comfortable for breathing.


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