Editorial Feature

Boron Arsenide (BAs) Semiconductors

Boron arsenide is a chemical compound of boron and arsenic. It occurs in cubic sphalerite, and it can be alloyed with gallium arsenide. It also occurs as an icosahedral boride. Boron arsenide is a wide bandgap semiconductor having a potential to self-heal radiation damage. It can be combined with substrates such as silicon carbide.


Boron arsenide finds applications in the following:

  • Solar cells
  • Devices that produce electrical energy by coupling a radioactive beta emitter to a semiconductor junction
  • Space electronics.

Chemical Properties

The chemical properties of boron arsenide are provided in the table below:

Chemical Properties
Chemical Formula BAs
Molecular Weight 85.733
CAS No. 12005-69-5
Group Boron – 13
Arsenic - 15
Crystal Structure Cubic
Lattice Constant 4.777 Å

Electrical Properties

The electrical properties of boron arsenide are provided in the table below:

Electrical Properties
Band Gap 1.5 eV

Thermal and Mechanical Properties

The thermal and mechanical properties of boron arsenide are provided in the tables below:

Thermal Properties
Debye Temperature 352°C
Mechanical Properties
Density 5.22 g/cm3
Melting Point 2027°C
Knoop Microhardness 19000

Safety Information

Safety Information
GHS Hazard Statements H301 + H331 - Toxic if swallowed or if inhaled
H410 - Very toxic to aquatic life with long lasting effects.
Safety Precautions P261 - Avoid breathing dust
P273 - Avoid release to the environment
P301 + P310 - If swallowed: Immediately call a POISON CENTER or doctor/physician
P311 - Call a POISON CENTER or doctor/ physician
P501 - Dispose of contents/ container to an approved waste disposal plant.


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