A Guide to Graphene Field-Effect Transistor (GFET) Chips

GFET chips offer scientists direct access to the most recent graphene devices. This supports application-driven research by eliminating the need to develop GFETs from scratch. Each chip includes 36 individual GFETs distributed in distinctive patterns—06-2555: Grid pattern; 06-2560: Quadrant pattern.

Features

  • 36 individual GFETs per chip
  • Devices not encapsulated ready for customers’ functionalization
  • Mobilities typically in excess of 1000 cm2/V.s
  • Ideal platform device for the research and development of new sensors

Applications

  • Graphene device research
  • Bioelectronics
  • Chemical sensors
  • Magnetic sensors
  • Biosensors
  • Photodetectors

Typical Specifications

. .
Chip dimensions 10 mm x 10 mm
Chip thickness 675 μm
Number of GFETs per chip 36
Gate Oxide thickness 90 nm
Gate Oxide material SiO2
Resistivity of substrate 1-10 Ω.cm
Metallization Nickel/Aluminium 140 nm
Graphene field-effect mobility >1000 cm2/V.s
Residual charge carrier density <2 x 1012 cm-2
Dirac point 10-40 V
Yield >75 %

Device Cross-Section

device cross-section

Typical Characteristics

Output curve (left) and transfer curve measured at source-drain voltage of 20 mV (right), measured at room temperature and vacuum conditions on a device with W = L = 50 μm.

Output curve (left) and transfer curve measured at source-drain voltage of 20 mV (right), measured at room temperature and vacuum conditions on a device with W = L = 50 μm.

Absolute Maximum Ratings

. .
Maximum gate-source voltage ± 50 V
Maximum temperature rating 150 °C
Maximum drain-source current density 107 A.cm-2

06-2555: GFET chip—grid pattern

06-2555: GFET chip—grid pattern

06-2560: GFET chip—quadrant pattern

06-2560: GFET chip—quadrant pattern

Channel Geometries

Description W (μm) L1 (μm) L2 (μm) Quantity
Standard 50 30 50 12
Varying Width 10 30 50 1
20 1
30 1
40 1
100 1
200 1
Large Square 100 80 100 3
200 180 200 3
Varying length 50 10 30 1
20 40 1
40 60 1
50 70 1
80 100 1
180 200 1
Small 2-probe 5 5 -- 3
10 10 -- 3

Device number W (μm) L (μm)
1 50 50
2
3
4
5
6 10 10
7
8 100 100
9

This information has been sourced, reviewed and adapted from materials provided by Strem Chemicals.

For more information on this source, please visit Strem Chemicals.

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