Posted in | News | Semiconductor

Transphorm Adds Two More GaN FETs to Its Gen III Product Line

Transphorm Inc.—the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors—today announced its first Gen III PQFN88 transistors. The new 650 V devices are available in two versions, the TP65H070LSG (source tab) and TP65H070LDG (drain tab), and offer an on-resistance of 72 milliohms.

Augmenting the Gen III Platform’s Renowned Reliability

Launched in June 2018, Transphorm’s Gen III devices came onto the market as the highest quality, highest reliability [Q+R] GaN FETs available. They pair a custom-designed low-voltage MOSFET with the GaN FET to offer:

  • Quieter switching
  • Higher performance at increased current levels with minimal external circuitry
  • Increased noise immunity (threshold voltage at 4 V)
  • Increased gate robustness (at +/- 20 V)

The Gen III drain and source PQFN88 packages include wider pins for increased board level reliability (BLR), which increases the reliability of multi-layer printed circuit board (PCB) designs. Offering the drain and source tab configurations also accommodates both high and low side switch locations. This provides increased radiated immunity as the large pad is soldered to the non-switching node. Further, adding PQFN88 devices to the existing list of Gen III TO-XXX FETs gives engineers an opportunity to explore GaN-driven surface mount applications using Transphorm’s latest technology.

“Our focus continues to be on increasing GaN FET reliability while delivering higher power density,” said Philip Zuk, Vice President of Technical Marketing Worldwide and North America Sales, Transphorm. “As market interest in high voltage GaN technology continues to grow, we also aim to arm our customers with device options that fit each potential application. To that end, the introduction of the 72 milliohm source and drain PQFN88 devices allows us to meet all three objectives as we fill out our current product family.”

The adoption rate of high voltage GaN power electronics is on the rise. In fact, Transphorm has announced several customers with diverse end products [ex: server and industrial power supplies, Gaming PC supplies, portable solar generators, and more] that demonstrate the technology’s value proposition.

Source: https://www.transphormusa.com/en/

Citations

Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    Transphorm Inc.. (2019, September 13). Transphorm Adds Two More GaN FETs to Its Gen III Product Line. AZoM. Retrieved on April 18, 2024 from https://www.azom.com/news.aspx?newsID=52128.

  • MLA

    Transphorm Inc.. "Transphorm Adds Two More GaN FETs to Its Gen III Product Line". AZoM. 18 April 2024. <https://www.azom.com/news.aspx?newsID=52128>.

  • Chicago

    Transphorm Inc.. "Transphorm Adds Two More GaN FETs to Its Gen III Product Line". AZoM. https://www.azom.com/news.aspx?newsID=52128. (accessed April 18, 2024).

  • Harvard

    Transphorm Inc.. 2019. Transphorm Adds Two More GaN FETs to Its Gen III Product Line. AZoM, viewed 18 April 2024, https://www.azom.com/news.aspx?newsID=52128.

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Your comment type
Submit

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.