Aluminium Gallium Indium Phosphide (AlGaInP) Semiconductors

Topics Covered

Description
Applications
Chemical Properties
Electrical Properties
Optical Properties
Recent Developments

Description

Aluminium gallium indium phosphide is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared.

However, improving the efficiency of aluminium gallium indium phosphide-based p-n junctions is a very complex and multifaceted task due to the losses in strain fields linked to the polar nature of gallium nitride.

Applications

Aluminium gallium indium phosphide finds applications in the following:

  • Light emitting diodes of high brightness
  • Diode lasers
  • Quantum well structure.

Chemical Properties

The chemical properties of aluminium gallium indium phosphide are provided in the table below:

Chemical Properties
Chemical Formula AlGaInP
CAS No. 163207-18-9
Group Aluminium – 13
Gallium – 13
Indium – 13
Phosphorus - 15

Electrical Properties

The electrical properties of aluminium gallium indium phosphide are provided in the table below:

Electrical Properties
Band Gap 1.81 - 2 eV

Optical Properties

The optical properties of aluminium gallium indium phosphide are provided in the tables below:

Optical Properties
Refractive Index 3.49
Chromatic Dispersion -1.68 µm-1
Absorption Coefficient 5.0536e+4 cm-1

Recent Developments

Ferreira MP et al (2009) evaluated the effect of phototherapy on the viability of cultured C2C12 myoblasts under different nutritional conditions by using aluminium gallium indium phosphide and low-energy gallium-aluminum-arsenide lasers with different powers and wavelengths. T

he C2C12 cell line was cultured in 10% fetal bovine serum (FBS) and nutrient-deficient 5% FBS, and then irradiated with the lasers. Cell proliferation was assessed indirectly 24h after irradiation by measuring the mitochondrial activity, using the crystal violet assay. The results showed that cell cultures grown in regular nutrient medium supplemented with 10% FBS exhibited higher growth rates than cultures grown in nutrient-deficient medium.

Campesato R et al (2009) studied the properties of aluminium gallium indium phosphide for application in the next-generation of high-efficiency multi-junction solar cells. The high direct band gap of this semiconductor makes it one of the most promising candidates for the manufacture of the top junction layers in multi-junction solar cells.

They found that the use of aluminium gallium indium phosphide with high aluminium content, in a five junction structure, can lead to solar cells with maximum theoretical efficiencies above 40%. They also developed single junction solar cells by metal-organic chemical vapor deposition technique and obtained the best performing cell with an open circuit voltage of 1.473V, and a short circuit current of 15mA/cm2.

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