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Dr. John Tartaglia of Stork CRS Elected to Fellow of ASM International

Senior Metallurgical Engineer and Engineering Manager honored "for contributions in alloy development and testing of metallic and semiconductor materials and extensive research, failure analysis and publication on fatigue, mechanical testing and materials performance."

From ASM International 21 Aug 2008

Scientists Use Laser to Manipulate and Improve the Properties of Quantum Dots

Their technique, published in Physical Review Letters, could significantly improve quantum dots. The accomplishment could accelerate development of powerful advanced cryptography applications, projected to be a key 21st-century technology.

20 Aug 2008

The Minerals, Metals + Materials Society Expands Online Resources with Launch of New Website

The Minerals, Metals + Materials Society (TMS) has launched a new version of its Materials Technology@TMS web site, an on-line gathering place for materials scientists and engineers throughout the world. All web users ar...

20 Aug 2008

Malvern Sets Stage for Hosting Global Event on New Developments in Rheometry

On Wednesday 3 September 2008, Malvern Instruments will host a global web event to announce a major development in the field of rheometry. Participants from around the world will have the opportunity to be among the ...

20 Aug 2008

Dow Corning Unleash Ultra High Perofrmance Thermal Grease for Intel Mobile Microprocessor

Dow Corning Corporation's Electronics group today announced the immediate availability of DOW CORNING(R) TC-5688 Thermally Conductive Compound - an ultra-high-performance, non-curing thermal grease developed for use ...

20 Aug 2008

Positive Report on Market Outlook for Nanomaterials in the Electronic Industry

The global market for nanomaterials for electronics applications will reach $600 million in 2008 and grow at a compound annual rate of more than 40% to reach nearly $7 billion in 2015, according to a report Market Outloo...

19 Aug 2008

IBM World's Smallest SRAM Memory Cell Paves Way for The Next Two Generation in Chip Manufacturing

IBM and its joint development partners (AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE)) today announced the first working static random access memory (SRAM) for the 22 nanometer (nm) technology node.

18 Aug 2008

Nanomagnet Spin Torque Switching in Next Generation Memory Chips Ready to Exceed Speed Limits

Using this so-called ballistic switching future non-volatile magnetic memories could operate as fast as the fastest non-volatile memories. Using ballistic spin torque reversal future MRAM could be programmed by current pulses shorter than 1 nanosecond

18 Aug 2008

Physicists Are One Step Closer in Building Plastic Semiconductor Switch for Ultrafast Computers and Electronics

University of Utah physicists successfully controlled an electrical current using the "spin" within electrons, a step toward building an organic "spin transistor"

18 Aug 2008

New Self-Assembling Molecular Systems Hold Key to Future of Microchip Production

Using a novel system based on molecules that can assemble themselves into precise patterns, MIT researchers have come up with a way of beating size limitations that would otherwise crimp improvements in data-storage media and electronic microchips.

15 Aug 2008

Editorial Highlights