Posted in | Materials Research

CNR-IMM Italy Uses SENTECH SI PEALD System for New High-k Materials

The Institute for Microelectronics and Microsystems (CNR-IMM(1)) in Catania, Italy is using a SENTECH SI PEALD LL tool with an 8-inch wafer configuration.

The research Institute belongs to the Physics and Matter Technologies Department (DSFTM) of the National Research Council of Italy (CNR), and has its headquarters in Catania. The integration of novel high-k gate dielectrics and passivating layers on devices based on Gallium Nitride and other wide band gap semiconductors is investigated using SENTECH PEALD tool.

SENTECH proprietary true remote CCP plasma source is especially suited for such low temperature and no damage applications. The special design of the plasma source only allows radicals to reach the wafer surface. High energy photons and ions are completely blocked.

Contextually, IMM and SENTECH have signed a Joint Development Agreement with the objective of the development and characterization of laminated layers.

The use of alternative high-k materials favors downsizing of the devices while keeping constant their capacitance values and reducing the leakage current density. In particular, the growth of Al2O3-HfO2 laminated layers is among the most often used combinations for such applications.

The SENTECH SI PEALD LL reactor is a high performance and flexible system, allowing the production of several high quality dielectric thin films, whose physical properties can be tailored upon changing their chemical composition. Possible applications of this activity are related not only to the integration of novel gate dielectrics and passivating layers on wide band gap semiconductors, but also for RF devices based on graphene.

Dr Raffaella Lo Nigrom, scientist in charge of the SI PEALD LL tool and of cooperation with SENTECH

Dr Lo Nigro has wide ranging expertise in the synthesis of binary and complex thin films by chemical vapor deposition methods for several microelectronic applications

The results of this work have been already published in scientific papers (2). Nanolaminated Al2O3-HfO2 and Al2O3/HfO2 bilayer thin films have been grown by plasma enhanced atomic layer deposition on silicon substrates.

Morphological, crystalline, and electrical properties of the layer stacks were analyzed after low temperature deposition and high thermal treatment.

The highly stable deposition of single films and multilayer laminates using SENTECH PEALD together with the very good uniformity of the deposition process over the whole wafer size are essential prerequisites for applications like designing new high-k dielectrics.

SENTECH is very proud that our innovative PEALD solution is helping CNR-IMM team in Catania to improve its research activities.

We are looking forward to deepen this partnership in the future. We are very convenient that our high efficient ALD technologies will conquer the European market further on. If you are interested in the SENTECH PEALD technologies please contact us here.

(1) National Research Council – Institute for Microelectronics and Microsystems

(2) Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Thin Solid Films, 601, 2016, 68-72

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