Translucent, a materials-based company and a subsidiary of Silex Systems, has designed a new embedded GaN-on-Si wafer template for application in the LED industry.
The template is embedded with DBR mirrors and can be used to grow low-cost LEDs on large-diameter wafers. The process will be demonstrated at the International Conference on Nitride Semiconductors (ICNS-9) scheduled on July 15, 2011 in Glasgow, Scotland.
A wafer template with 100 mm diameter has been developed using a rare earth oxide (REO) material system that was grown epitaxially on silicon substrates. The structure is housed by a GaN layer, which has the capability to support additional nitride epitaxy for LED growth. The lattice engineering delivered by the REO material can help to reduce strain caused during the growth of GaN. The new embedded silicon solution has been offered to potential clients.
Mirrored Si, a new embedded silicon solution from Translucent, enables the growth of LEDs directly on top of the GaN-on-Si template with an integrated DBR mirror. A REO layer on the DBR mirror allows GaN to enclose the wafer template.
The company will discuss the delivery of GaN template to LED manufacturers at the ICNS-9. Mirror reflectivity can go beyond 98% at the wavelength range of 450 nm in very thin layers of REO material. Translucent has used molecular beam epitaxy reactors to grow the REO material. Currently, the company is preparing for commercial release of its embedded silicon mirror technology with 150 and 200 mm wafers.