Structured Materials Industries, Inc. (SMI) reports that it has filed a provisional patent for the MOCVD of GeSbTe based Chalcogenides as used in Chalcogenide Random Access Memories (CRAMs). CRAMs are a very promising non-volatile memory material for high speed high density memories. CRAMs are also inherently radiation tolerant, making them appropriate for use in military and space memory applications.
SMI has been working on MOCVD of chalcogenides for the past two years with federal, commercial and internal support. “Successfully depositing chalcogenide films by MOCVD initially proved to be very challenging; however once the process dynamics were resolved a straightforward deposition was achieved”, said project scientist Dr. Edwin Dons.
“The successful MOCVD of chalcogenides opens the door to implementing improved manufacturing processes and the potential to more rapidly implement CRAM production and the ability to more rapidly explore alloying and doping enhancements to the material”, said company president Dr. Gary S. Tompa.