Oct 30 2003
Spire Corp have received a patent from the US Patent and Trademark Office for technology enabling the implantation of aluminium oxide in gallium arsenide and other group III-V semiconductor wafers for isolation of integrated circuit lasers and optical waveguides.
The patent is titled “Formation of Insulating Aluminium Oxide in Semiconductor Substrates” and is designated US Patent No. 6635559, issued October 21, 2003. The patent described a process whereby aluminium oxide can be selectively formed in the top layers of III-V compound semiconductor wafer structures to ensure electrical isolation between devices in integrated circuits.
The technology can also be applied to waveguides, wireless audio communication devices, wi-fi devices, broadband and wireless internet and audio devices and potentially optoelectronic and photonic components and systems.
For more information on aluminium oxide, click here.