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KAIST Quantifies Surface Roughness Interference in Electrochemical Strain Microscopy to Prevent Battery Mapping Errors

A signal that appears to show ions moving inside a battery may, in fact, be an illusion caused by an uneven surface. A KAIST research team has identified the origin of this type of artifacts, which can lead researchers to misinterpret what is happening inside a battery, and has developed a method to reduce it. The findings are expected to enable more accurate analysis of ion movement and improve the reliability of next-generation battery-material development, including that of solid-state and sodium-ion batteries.

9 Sep 2026

Semplor Introduces NANOS EBSD, Bringing Integrated Crystallographic Analysis to the Tabletop SEM

Semplor has introduced NANOS EBSD, a tabletop scanning electron microscope (SEM) with integrated Electron Backscatter Diffraction (EBSD) capability, bringing crystallographic analysis into a compact and intuitive SEM platform.

From Semplor 7 Sep 2026

Semplor Introduces ONYX, the Largest- Stage Tabletop SEM

Semplor has launched ONYX, a new tabletop scanning electron microscope (SEM) designed to give laboratories greater flexibility when working with large or multiple samples and higher-throughput workflows.

From Semplor 7 Sep 2026

Liquid Metals Can Stretch Thousands of Percent. Printing Them Is the Hard Part

This review examines how the rheology, surface oxidation, and interfacial properties of liquid metals shape their printability and performance in stretchable electronics. The authors show how advances in material formulation and 2D-to-4D printing are enabling highly conductive, deformable devices, while identifying scalability, encapsulation, recyclability, and reliable integration as key barriers to practical use.

7 Sep 2026

Bruker Drives Major Advances in Detector Technology for Semiconductor and Nanostructure Analysis

Bruker today announced the launch of the XFlash® 7200 FIRE, the world’s first inclined large-area Energy-Dispersive Spectroscopy (EDS) detector for Scanning Electron Microscopy (SEM) built on Bruker’s revolutionary four-segment Silicon Drift Detector (SDD) architecture.

From Bruker AXS Inc. 3 Sep 2026

Bruker Announces Major Advances in Detector Technology for Semiconductor, Thin Film, Energy Materials and Nanostructure Characterization

Bruker today announced the launch of two groundbreaking detectors at Microscopy & Microanalysis (M&M) 2026: the eWARP™ TKD, a next-generation Transmission Kikuchi Diffraction (TKD) detector for nanoscale crystallographic characterization, and the XFlash® FlatQUAD™ 2L, the latest evolution of Bruker’s annular EDS detector, enabling simultaneous Energy Dispersive X-ray Spectroscopy (EDS) and Back-Scattered Electron (BSE) detection.

From Bruker Nano GmbH – Electron Microscope Analyzers 2 Sep 2026

Liquid Metal Valve Keeps Circuits Working at 1000% Strain

Researchers developed a liquid metal-semiconductor valve that regulates current direction while remaining functional in flexible circuits stretched to approximately 1000% strain. The system also supports tunable switching, reconfigurable OR and AND logic, and wireless-energy-assisted logic operation under extreme deformation, providing a new approach to adaptive soft electronics.

31 Aug 2026

Thermally Conductive, Low Modulus Epoxy Meets NASA Low Outgassing Specifications

Master Bond EP55TCFL is a thermally conductive, electrically insulating epoxy system developed for bonding, sealing, coating, and small potting applications. It meets NASA low outgassing specifications and incorporates a filler with small particle sizes, enabling application in thin bond lines to minimize thermal resistance.

From Master Bond Inc. 28 Aug 2026

PI Expands Materials Portfolio with Composite and Lead-Free Piezo Materials

Composite and lead-free piezoelectric materials offer new design options for ultrasonic transducers, with tailored properties for frequency, sensitivity, power, and flexibility.

From PI Ceramic GmbH 27 Aug 2026

Twisting Perovskite Interfaces Slows Ion Migration and Improves Device Stability

Researchers used atomic-resolution imaging and simulations to show how twist angle alters halide-ion migration across CsPbBr3–CsPbCl3 perovskite heterostructures by changing the formation of interfacial diffusion channels. A 28° twist delayed interdiffusion, reduced the diffusion-channel ratio by more than 60%, and improved photodetector stability under accelerated thermal testing.

27 Aug 2026

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