GenISys Add Advanced 3-D Resist Modeling Techniques to Inventory

Positioning itself for future growth and market leadership, GenISys GmbH, a provider of software for optimization of microstructure fabrication processes, today announced it has signed an agreement with the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) for the development and licensing of advanced 3-D resist modeling techniques for e-beam and proximity lithography.

GenISys further announced that Nikola Belic, a leading pioneer in proximity effect correction (PEC) technology and developer of the widely used Proxecco PEC software, will join GenISys as senior development engineer, effective January 2008.

According to the terms of its agreement with Fraunhofer IISB, GenISys will integrate the 3-D resist modeling technologies developed by Fraunhofer IISB’s Lithography Simulation Group under the direction of Dr. Andreas Erdman into GenISys’ products for proximity lithography for microsystems and e-beam lithography, and market them. Insofar, GenISys will be the sole software house partner for IISB regarding distribution. Specifically, GenISys will adapt and integrate Fraunhofer’s 3-D resist modeling technologies into its Layout LAB mask-aligner lithography simulation software and its Layout BEAMER e-beam data preparation and PEC software.

As structures continue to shrink, absolute accuracy on the wafer becomes increasingly critical. Resist process effects have a major influence on the resolution of nanometer e-beam lithography, and standard proximity effect correction based solely on electron scattering is falling short. By combining modeling of writing strategy, electron scattering and resist effects, Layout BEAMER provides the most complete solution for model-based process correction and verification.

For MEMS and advanced packaging applications using mask aligner lithography (proximity printing), control of the 3-D resist profile is essential. Accurate 3-D simulation of the resist process enables process optimization and correction techniques, as proven over many years in advanced IC manufacturing using projection lithography. The addition of 3-D resist modeling will make Layout LAB the most effective simulation software for model-based optical process development, correction and verification (DfM technologies) for mask aligner lithography.

“We decided to leverage Fraunhofer’s almost 20 years of experience and proven expertise in resist modeling for advanced projection lithography honored by working with the industry’s leading IC manufacturers,” said Ulrich Hofmann, founder and general manager of GenISys. “With Fraunhofer’s proven 3-D resist simulation technology, our products will give our customers unprecedented accuracy for modeling and optimizing their layouts and processes. The full, 3-D model will help them to more effectively correct for the limitations of the exposure process. This, in turn, will enable them to cut development time and costs even more, so they can stay ahead of their competition by bringing the latest micro and nano products to market faster and more economically.”

“The research and licensing agreement with GenISys is an important step in the diversification of our research and development activities in lithography simulation,” said Dr. Andreas Erdmann, leader of Fraunhofer IISB’s Lithography Simulation Group. “Simulation has become an established and indispensable technique for the development and optimization of optical projection printing in semiconductor fabrication. The transfer and adaptation of our simulation models and algorithms to other lithographic methods and applications will help developers to understand the advantages and limitations of these microfabrication technologies and push them closer to their physical limits. With GenISys, we now have a very competent partner for the integration of our technology into a professional commercial software package for e-beam and mask aligner lithography.”

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