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Innovative Silicon Awarded Tenth Patent on Advanced Memory Technology

Jun 9 2006

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Innovative Silicon, the developer of Z-RAM high density memory IP, today announced that it has been awarded its tenth patent on advanced memory technology: U.S. patent 6,982,913.

ISi now has been granted nine U.S. and one Taiwan patent, with another five U.S. patent applications allowed.

The company also announced that it has an additional 41 patents pending worldwide.

The company applied for the patents to protect its one transistor, zero capacitor Z-RAM technology that is five times denser than embedded SRAM and approximately twice as dense as embedded DRAM.

http://www.innovativesilicon.com/

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