Aug 22 2013
Topics Covered
Introduction
Applications
Chemical Properties
Introduction
Aluminum indium arsenide is a semiconductor material with a large bandgap and same lattice constant as that of GaInAs.
Applications
Aluminum indium arsenide is commonly used as a buffer layer in metamorphic HEMT transistors for adjusting the lattice constant differences between the GaAs substrate and the GaInAs channel. It can also be used in quantum wells and broadband quantum cascade lasers by forming alternate layers with indium gallium arsenide.
Chemical Properties
The chemical properties of aluminum indium arsenide are provided in the table below:
|
Chemical Properties |
|
Chemical Formula |
AlInAs |
|
Group |
Aluminum – 13
Indium – 13
Arsenic – 15 |
Recent Developments
Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells, with AlGaAs barriers by nanosecond pump-probe spectroscopy. Pon, RM (1991) calculated the line width broadening factor as the gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells. The results showed that the line width broadening factor increases with wavelength and decreases with carrier density.
In addition, transitions in GaAs/AlGaAs coupled-well super lattices indicate that they are a function of the center barrier thickness and revealed shorter carrier lifetimes than a GaAs quantum well of equal thickness without a center barrier.
The increased use of gallium arsenide, indium arsenide, and aluminum gallium arsenide has raised concerns about occupational exposure to them. It is evident from the pharmacology review paper prepared by Tanaka A (2004) that between InAs, GaAs, and AlGaAs, InAs is more toxic to the lungs when given intratracheally. This is probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials such as aluminum, gallium, or indium and not arsenic itself. It was revealed that aluminum, gallium, or indium become toxic when released from the particles.