Samsung Electronics Co., Ltd., the world’s leading producer of semiconductor and display solutions, formally opened the doors to its new Device Solutions America headquarters here today, setting the stage for a new wave of innovation across the digital landscape.
UK-based SmartKem Ltd has signed Letters of Intent (LOI) with two leading Asian displays manufacturers marking significant advances in the development of its market leading tru-FLEX® semiconductor technology. The agreements signify increasing interest for SmartKem’s semiconductors, with Asian manufacturers collaborating to drive manufacturing, integration and commercialisation of organic thin-film transistor (OTFT) technology in the flexible electronic display market.
A group of scientists from the U.S. Department of Energy’s Argonne National Laboratory and the MESA+ Institute for Nanotechnology at the University of Twente in The Netherlands has observed a dynamic Mott transition in a superconductor.
A team of researchers from the GRid-connected Advanced Power Electronic Systems Center (GRAPES) at the University of Arkansas has been awarded a $200,000 grant to analyze the modeling of gallium nitride (GaN) devices.
Researchers from the Pohang University of Science and Technology (POSTECH) have tuned the band gap in Black Phosphorus (BP) to form a superior conductor, by transforming the semiconducting material into a special state of matter that has anisotropic dispersion. This achievement enables greater adaptability in design and optimization of solar panels, telecommunication lasers, and other such electronic and optoelectronic devices.
A multi-disciplinary research team had developed a fabrication technique for creating pure molybdenum ditelluride (MoTe2) last year. The team not only succeeded in developing pure MoTe2, it also was able to obtain two varieties – semiconducting and metallic.
Researchers at the Institute for Basic Science (IBS) Center for Integrated Nanostructure Physics at Sungkyunkwan University (SKKU) in South Korea have developed a new semiconductor material from black phosphorus (BP), which holds promise as a replacement for silicon in future computer chips.
A team of researchers at Duke University has developed an ultrafast plasmonic device, which can turn on and off 90 billion times per second.
Diodes Incorporated, a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today held the production commencement ceremony for Diodes Technology (Chengdu) Company Limited’s assembly and test facility at Chengdu Hi–Tech Industrial Development Zone (CDHT).
A team of researchers at the Oak Ridge National Laboratory, Department of Energy, has integrated a new synthesis process with standard electron-beam lithography methods to create complex and scalable arrays of semiconductor heterojunctions in random patterns within a nanometer-thick semiconductor crystal. This unique process depends on converting patterned areas of a single-layer crystal into another layer of crystal. The study has been published in Nature Communications.
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