Crystal-IS have announced that they have received a years extension and further $750K in funding from DARPA for their Semiconductor Ultraviolet Optical Sources (SUVOS) and RF/Microwave/Millimetre-wave Technology.
Crystal-IS will focus on improving the qialty of their ultra-low dislocation density native aluminium nitride (AlN) substrates. These have the potential to enable critical advances in multiple III-nitride device technologies of strategic national interest in applications such as high-power RF transistors and high efficiency ultraviolet emitters. Such devices are of both military and commercial significance.
AlN substrates offering the following potential advantages over other competing materials:
- Increased device performance and reliability
- Customer specified orientation e.g. a-plane, m-plane and c-plane
- Very low dislocation density (<1000 per cm2 leading to greater device yield and reliability
- Excellent thermal expansion match to III-nitride device structures
- Isomorphic and lattice matched to III-nitride device structures
- Well defined cleavage planes
- High thermal conductivity
For more information on aluminium nitride, click here.
May 4th, 2004