Mar 11 2016
AIXTRON SE, a worldwide leading provider of deposition equipment to the semiconductor industry, announced today that one of Korea’s leading electronics companies, LG Innotek has selected a AIX G5 WW (Warm-Wall) reactor for the development of silicon carbide (SiC) epitaxial wafers aimed mainly at power devices for automotive and renewable energy applications. The system configured for 8x6-inch substrates was delivered in the fourth quarter 2015.
The AIX G5 WW vapor phase epitaxy (VPE) system is based on AIXTRON’s production-proven planetary reactor platform giving the largest batch capacity and highest throughput in the industry. The equipment design aims at squeezing production costs to a minimum, while maintaining excellent production quality.
Dr. Minseok Kang, Vice President of LG Innotek and the head leader of the Korea’s WPM (World Premier Material) national project for SiC materials development lead by LG Innotek, comments: “We see rising demand for SiC-based systems from major automotive manufacturers. Based on our long-term experience with AIXTRON epitaxy systems, we believe that AIXTRON’s G5 WW tool offers unique advantages such as high throughput and yield on 6-inch wafers. Furthermore, we can pre-qualify SiC epitaxial wafer samples using AIXTRON’s SiC application lab and we appreciate the outstanding, dedicated SiC customer support package.”
“Our AIX G5 WW perfectly matches the industry requirements for high-volume production of SiC-based power electronic devices. We will provide full support to LG Innotek for the quick installation and SiC process qualification of the system”, states Dr. Frank Wischmeyer, Vice President Power Electronics at AIXTRON.
LG Innotek is a global specialized materials and components manufacturer and an affiliate of LG Group. The company focuses onto the core material and components of the advanced technology-based industries including Mobile, Automotive, Display, Semiconductor, IoT, and LED. LG Innotek, established in 1970 is headquartered in Seoul.