May 20 2007
Nitronex, an innovative developer and manufacturer of high-performance RF power transistors for the commercial and broadband wireless infrastructure markets, has developed a 28V, 100W Gallium Nitride high electron mobility transistor (HEMT) ideal for WiMAX applications. Designed using Nitronex’s patented SIGANTIC NFR1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 - 2.7GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64- QAM ¾, 8 burst, 3.5MHz channel bandwidth, 10.3dB PAR @ .01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5dB of gain (typical), 21% efficiency, and less than 2.5% EVM - all at >10W of power.
“The NPT25100 is a device our customers are eager to receive,” said Chris Rauh, VP of Sales and Marketing for Nitronex. “The market for 2.5GHz WiMAX solutions is accelerating and the NPT25100 HEMT device will deliver the kind of price and performance our customers need.”
The NPT25100 is packaged in a thermally enhanced Copper Moly Copper package that will be offered in both bolt-down and pill versions. Samples and application boards will be available starting in June and full production qualification is expected in July. The 1000 piece suggested price for the NPT25100 is $90.
The NPT25100 is lead-free and RoHS compliant.